隧穿结对柔性衬底非晶硅/微晶硅叠层太阳电池特性的影响  

Effect of Tunnel Junctions on Properties of Amorphous Silicon/Microcrystalline Silicon Tandem Solar Cells on Flexible Substrates

作　　者：周丽华[1] 刘成[1] 叶晓军[1] 钱子勍[1] 陈鸣波[1] 

机构地区：[1]上海空间电源研究所,上海200233

出　　处：《人工晶体学报》2010年第5期1136-1140,共5页Journal of Synthetic Crystals

基　　金：上海市博士后科研资助计划项目(08R21420200);上海市引进技术的吸收与创新计划项目(07XI2-016)

摘　　要：采用等离子体化学气相沉积(PECVD)方法在不锈钢柔性衬底上制备了不同厚度的硅基p+/n+隧穿结,应用于非晶硅/微晶硅叠层太阳电池,分析了其对太阳电池电学和光学特性的影响。发现p+层厚度增加后,电池的开路电压提高,短路电流密度减小;随着n+层厚度的变化,电池的短路电流密度和填充因子均存在一个最佳值。将优化后的p+/n+隧穿结分别应用于不锈钢衬底和聚酰亚胺衬底的非晶硅/微晶硅叠层太阳电池,分别获得了9.95%(AM0,1353 W/m2)和9.87%(AM0,1353 W/m2)的光电转换效率。Series of p^＋/n^＋ tunnel junctions with different thickness of amorphous silicon/microcrystalline silicon solar cells were prepared by plasma enhanced chemical vapor deposition（PECVD）.The influences of p^＋/n^＋ tunnel junctions on the electrical and optical properties of solar cells were investigated.It is found that the open circuit voltage increased and the short circuit current decreased as the thickness of p^＋ layer increasing,and the short circuit current and FFhave a best value when the thickness of n^＋ layer changes.With the optimized p^＋/n^＋ tunnel junctions,amorphous silicon/microcrystalline silicon tandem solar cells on stainless steel flexible substrates with conversion efficiency of 9.95%（AM0,1353 W/m^2） and on polyimide with 9.35%（AM0,1353 W/m^2） were obtained.

关 键 词：柔性衬底 隧穿结 非晶硅/微晶硅 叠层太阳电池 

分 类 号：O484[理学—固体物理] TK514[理学—物理]