TLP扩散焊过程中近表面区域元素贫化控制研究  

Study the Evaporating Controlled of Near Surface Element in TLP Diffusing Bonded

作　　者：李晶[1] 侯金保[1] 吴松[1] 

机构地区：[1]北京航空制造工程研究所,北京100024

出　　处：《材料工程》2010年第10期69-72,共4页Journal of Materials Engineering

摘　　要：为了控制TLP扩散焊过程中近表面区域元素贫化,通过对IC10合金TLP扩散焊不同充氩分压量实验,测试分析充氩分压对表面Cr元素含量的影响和对焊接组织性能的影响。实验结果表明:TLP扩散焊真空充氩分压能控制表面Cr元素贫化层厚度在4μm左右,能有效控制TLP扩散焊过程中的表面元素贫化问题;焊接保温20min后开始分压,对焊接接头组织性能无不利影响;焊后进行热处理,能提高焊接强度,恢复基体组织性能。添加涂层后,经过扩散处理,贫Cr层消失。For controlling the evaporating of near surface element in TLP diffusing bonded the effect of joint microstructure and Cr content was tested with doing some partial pressure experiments with argon gas in IC10 alloy TLP diffusing bonded.The results indicated that TLP diffusing bonded with vacuum full of argon gas can control the surface element Cr evaporating,the evaporating thickness was 4μm.The problem of element Cr evaporating in TLP bonded was controlled effectively.Vacuum full of argon gas after holding 20 minute,there was no bad effect to the joint microstructure and property.Heat treatment after bonding can increase the bonding intensity,recover the microstructure.After adding coating and through diffusion treating,the depleted Cr layer disappear.

关 键 词：IC10合金 贫化 分压 组织 

分 类 号：TG457.1[金属学及工艺—焊接]