自制SnO_2·xH_2O对^(68)Ge-^(68)Ga发生器吸附性能的影响  

THE EFFECT OF SnO 2· x H 2O ON ADSORPTION CHARACTERISTICS FOR 68 Ge 68 Ga GENERATOR

作　　者：刘正浩[1] 贾聪莉[1] 

机构地区：[1]北京师范大学化学系

出　　处：《同位素》1999年第1期27-32,共6页Journal of Isotopes

摘　　要：用自制的ＳｎＯ２·ｘＨ２Ｏ经热处理后作为６８Ｇｅ－６８Ｇａ发生器的吸附剂，用模拟试验的方法研究了Ｇｅ的吸附与Ｇａ的淋洗。结果表明，自制ＳｎＯ２·ｘＨ２Ｏ对Ｇｅ有较好的选择吸附性能，２．０ｍＬ０．１ｍｏｌ／ＬＨＣｌ溶液对６８Ｇａ的淋洗效率可达８８％。The hydrate SnO 2· x H 2O that used as absorbent of 68 Ge/ 68 Ga generator is prepared. Some parameters on the generator are investigated with the use of imitation experiment. It is found that the hydrate SnO 2· x H 2O have better selective absorbability for Ge. The elution efficiency for Ga is near 88% with 2.0 mL 0 1 mol/L HCl solution.

关 键 词：发生器 吸附性能 淋洗 同位素 镓68 锗68 

分 类 号：TL921[核科学技术—核燃料循环与材料]