氢促进铁磁性形状记忆合金Ni_(50)Mn_(30)Ga_(20)的纳米压痕蠕变与压痕回复  

Promotion effect of hydrogen on nanoindentation creep and recovery of nanoindentation in Ni_(50)Mn_(30)Ga_(20) ferromagnetic shape memory alloy

作　　者：沈连成[1,2] 宿彦京[1] 何健英[1] 李金许[1] 褚武扬[1] 乔利杰[1] 

机构地区：[1]北京科技大学腐蚀与防护中心,北京100083 [2]中国科学院半导体研究所,北京100083

出　　处：《北京科技大学学报》2010年第10期1306-1310,共5页Journal of University of Science and Technology Beijing

基　　金：国家自然科学基金资助项目(No.50731003;No.50671007);新金属材料国家重点实验室开放课题(No.2009Z-04)

摘　　要：采用纳米压痕法研究了氢对Ni50Mn30Ga20取向多晶室温纳米压痕蠕变和压痕塑性形变的影响.结果表明,Ni50Mn30Ga20取向多晶在室温下能够发生纳米压痕蠕变.在试样室温真空充氢之后,引入的氢不仅能够促进纳米压痕蠕变,还可以使得马氏体相变的"伪弹性"存储的弹性能得以释放,发生逆转变,使部分塑性变形回复.The effect of hydrogen on nanoindentation creep at room temperature and plastic deformation of nanoindentation in preferentially orientated polycrystalline Ni50Mn30Ga20 was investigated by nanoindentation. The results show that nanoindentation creep in the preferentially orientated polycrystalline Ni50Mn30Ga20 could occur at room temperature. After the specimens was hydrogen charged in vacuum at room temperature, the introduced hydrogen could not only promote the nanoindentation creep, but also release the elastic energy stored in martensitic pseudoelastieity and induce reversible martensitic transformation, which resulted in the partial recovery of plastic deformation.

关 键 词：铁磁性形状记忆合金 纳米压痕 蠕变 氢 伪弹性 

分 类 号：TB303[一般工业技术—材料科学与工程]