Structural investigation and luminescent properties of BaZr(BO_3)_2:Eu^(3+) phosphors containing Si  

作　　者：ZHANG ZhongPeng LI GuangMin ZHANG XiaoSong XU ShengYan JI Ting LI Lan 

机构地区：[1]Insititute of Material Physics, Tianjin University of Technology, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, Tianjin Key Laboratory for Optoelectronic Materials and Devices, Tianjin 300191, China [2]Department of Fundamental Subjects, Tianjin Institute of Urban Construction, Tianjin 300384, China [3]Tianjin Xinhua Staff and Workers University, Tianjin 300040, China

出　　处：《Chinese Science Bulletin》2010年第29期3252-3255,共4页

基　　金：supported by the National Basic Research Program of China;National Natural Science Foundation of China (60877029, 60977035, 60907021);Natural Science Foundation of Tianjin Education Committee (20071207);Natural Science Foundation of Tianjin (09JCYBJC01400, 07JCYBJC06400)

摘　　要：Si4+-doped BaZr(BO3)2:Eu3+ phosphors are prepared by a conventional solid-state reaction.The influence of Si4+ addition on the charge transfer state of Eu3+-O2- and photoluminescence(PL) properties of BaZr(BO3)2:Eu3+ are discussed.Room temperature PL spectra indicated that efficient emission is obtained by Si doping.Increased values for the peak-peak ratio(PPR) of BaZr(BO3)2:Eu3+ at higher Si doping concentrations implied that the Eu3+ ion is located in a more asymmetric environment in BaZr0.8Si0.2(BO3)2:Eu3+ than in the undoped samples.The Judd-Ofelt parameters Ωλ(λ=2,4) were calculated from the PL data,giving results that were consistent with those from the PPR.The maximum radiative quantum efficiency was achieved at a Si doping concentration of 20 mol%.Si4＋-doped BaZr（BO3）2：Eu3＋ phosphors are prepared by a conventional solid-state reaction. The influence of Si4＋ addition on the charge transfer state of Eu3＋-O2 and photoluminescence （PL） properties of BaZr（BO3）2：Eu3＋ are discussed. Room temperature PL spectra indicated that efficient emission is obtained by Si doping. Increased values for the peak-peak ratio （PPR） of BaZr（BO3）2：Eu3＋ at higher Si doping concentrations implied that the Eu3＋ ion is located in a more asymmetric environment in BaZr0.8Si0.2（BO3）2：Eu3＋ than in the undoped samples. The Judd-Ofelt parameters .Ωλ （λ=2,4） were calculated from the PL data, giving results that were consistent with those from the PPR. The maximum radiative quantum efficiency was achieved at a Si doping concentration of 20 mol%.

关 键 词：Si掺杂 铕离子 荧光粉 发光性能 结构调查 硅掺杂 固相反应 电荷转移 

分 类 号：TN304.5[电子电信—物理电子学] O614.338[理学—无机化学]