Synthesis of High Quality CulnSe2 Films with Oxygen Precursor by Non-vacuum Process  

通过氧化物前驱体非真空方法制各高质量CuInSe2薄膜

作　　者：蒋帅[1] 江国顺[1] 刘伟峰[1] 朱长飞[1] 

机构地区：[1]中国科学技术大学材料科学与工程系,中国科学院能量转化材料霞点实验室,合肥230026

出　　处：《Chinese Journal of Chemical Physics》2010年第5期587-590,622,共5页化学物理学报（英文）

摘　　要：The CulnSe2 absorber was synthesized by non-vacuum process with a simple and low-cost method, which fabricated absorber layer of thin-film solar cell. The extra amount of Se was added into the ink to help reduction of the oxide and solid Se fountain was used to provide Se atmosphere during the selenization progress. The influence of same factors was investigated, such as the time of reduction in H2, the time of selenization and the Se vapor pressure. The selenizaion, processed at 550 ℃ for 60 min with the Se vapor pressure at 1.90 kPa, resulted in high quality CulnSe2 layer with very good chemical composition.

关 键 词：Thin film CulnSe2 Non-vacuum NANOPARTICLE 

分 类 号：O[理学]