一种增益可控型LR-WPAN CMOS功率放大器  

A Gain Controllable CMOS Power Amplifier for LR-WPAN Applications

作　　者：韦保林[1] 戴宇杰[1] 张小兴[1] 吕英杰[1] 

机构地区：[1]南开大学微电子学研究所,天津300457

出　　处：《南开大学学报（自然科学版）》2010年第5期41-45,共5页Acta Scientiarum Naturalium Universitatis Nankaiensis

基　　金：国家科技支撑计划(2006BAD30B08)

摘　　要：设计了一种可适应于低速率无线个人区域网(LR-WPAN)的增益可控AB类CMOS射频功率放大器.通过两位数字状态位实现三级增益及输出功率控制,采用片上集成电感和电容实现负载LC回路,有效地提高电路的集成度.采用0.18μm CMOS工艺设计并利用SpectreRF在2.4 GHz ISM频段仿真,实验结果表明,该功率放大器具有较好的性能指标,最小S_(21)参数为13.7 dB,最小输出三阶截断点(P_(OIP3))为6.74 dBm,在输入功率为-10 dBm时最小功率附加效率(PAE)为14.3%,满足LR-WPAN发射模块的要求.A gain controllable CMOS class AB RF power amplifier for low rate wireless personal area network（LR-WPAN） applications was designed.The gain control was implemented with two digital bits,and the load LC net work was implemented with on-chip inductor and capacitor,which can improve the integration of the chip.The design was done in 0.18μm CMOS technology,and simulated with SpectreRF in 2.4 GHz ISM band,experiment results show that the power amplifier has well specifications;the minimum S_（21） is 13.7 dB and the minimum output-referred third-order intercept points（P_（OIP3）） is 6.74 dBm,the minimum power added efficiency（PAE） is 14.3%with the input power of -10 dBm,the specifications are suitable for LR-WPAN applications.

关 键 词：AB类RF功率放大器 Cascode结构 低速率无线个人区域网(LR-WPAN) 

分 类 号：TN722.3[电子电信—电路与系统]