低噪声低功耗微电容读出电路的优化与设计  

Optimization and Design of Low-Noise Low-Power Microcapacitance Readout Circuit

作　　者：柴旭朝[1] 顾晓峰[1] 戴欢[1] 苏小波[1] 于宗光[1,2] 

机构地区：[1]江南大学信息工程学院,江苏无锡214122 [2]中国电子科技集团总公司第58研究所,江苏无锡214035

出　　处：《传感技术学报》2010年第8期1102-1105,共4页Chinese Journal of Sensors and Actuators

基　　金：教育部新世纪优秀人才支持计划资助(NCET-06-0484);教育部留学回国人员科研启动基金资助(教外司留[2008]890);江南大学自主科研计划资助(JUSRP20914)

摘　　要：结合斩波稳定技术,通过电容匹配和多级优化的方法分别对用于MEMS微传感器的微电容读出电路的噪声性能和功耗进行了优化。基于优化分析采用两级斩波稳定电路结构,在CSMC 0.5μm CMOS工艺下,用Cadence Spectre进行了仿真验证。结果表明能精确检测出aF(10-18F)量级的微电容,输出电压变化量与电容变化量呈线性关系,并且输出失调电压仅为38.9μV,等效输入噪声电压为17 nV/Hz1/2。在5 V电源电压下功耗仅为2.5 mW,输出延时为6.29μs。Based on the chopper-stabilized technique,the capacitance matching and multi-stage optimization methods are employed to optimize the noise and power dissipation of the microcapacitance readout circuit for MEMS microsensor.According to the optimization analysis,the dual-chopper stabilized circuit is designed and successfully verified by Cadence Spectre in CSMC 0.5 μm CMOS process.Simulation results indicate that the resolution of microcapacitance detection is in the order of magnitude aF,and the capacitance variation shows a linear relation with the output voltage variation.The output voltage offset is only 38.9 μV and the equivalent input-referred noise is about 17 nV/Hz1/2.Under the 5 V supply,the power consumption is only 2.5 mW,and the output delay is 6.29 μs.

关 键 词：微传感器 读出电路 斩波稳定技术 检测电容 

分 类 号：TN432[电子电信—微电子学与固体电子学]