宽带低相位噪声CMOS环型压控振荡器的设计与研究  

The Comparison and Design of a Wide-Band,Low-Phase-Noise CMOS Voltage Controlled Oscillator

作　　者：高志强[1] 孙鹏[1] 徐元旭[1] 姚恩义[1] 胡永双[1] 

机构地区：[1]哈尔滨工业大学微电子科学与技术系,哈尔滨150006

出　　处：《电子器件》2010年第5期572-574,共3页Chinese Journal of Electron Devices

摘　　要：采用一种环型电路结构,设计了一个1.3GHz宽带线性压控振荡器。采用TSMC 0.18μm RF CMOS工艺,利用Cadence SpectreRF完成对电路的仿真。结果显示,在电源电压Vdd=1.8 V时,控制电压范围为1.0～1.18 V,频率的变化范围为800 MHz～2.1 GHz,相位噪声为-105 dBc/Hz@1 MHz。很好地解决了相位噪声与调谐范围之间的矛盾。In order to solve the contradiction between phase noise and tuning range,a 1.3 GHz linear voltage controlled oscillator was designed based on the ring structure.The circuit was designed in TSMC 0.18 μm CMOS RF process,and simulated by the SpectreRF in Cadence under supply voltage of 1.8 V.The output frequency ranged from 800.0 MHz to 2.1 GHz.The phase noise was-105 dBc/Hz at an offset of 1 MHz.

关 键 词：CMOS 压控振荡器 环型结构 相位噪声 

分 类 号：TN492[电子电信—微电子学与固体电子学]