一种高精度低电源电压带隙基准源的设计  

Design of a Bandgap Voltage Reference with High Accuracy and Low Power Voltage

作　　者：刘宗福[1] 马冬冬[1] 赵丹辉[1] 

机构地区：[1]中国人民解放军92785部队技术室

出　　处：《电子科技》2010年第11期41-43,50,共4页Electronic Science and Technology

摘　　要：设计了一种可在低电源电压下工作,具有较高电源电压抑制比、低温度系数和低功耗的带隙基准电压源。电路基于对具有正负温度系数的两路电流加权求和的原理,对传统电路做出了改进。采用UMC0.25μmCMOS工艺模型,使用Hspice进行模拟,设计的基准源输出电压为900mV,电源电压可降低到1.1V,温度系数为8.1×10-6/℃。A bandgap reference circuit with low power supply,high PSRR,low temperature coefficient and low power dissipation is designed.The bangap reference is based on the sum of two currents with both positive and negative temperature coefficients,and some improvement is made on the traditional design.The voltage reference is implemented in a UMC 0.25 μm CMOS process and simulated with Hspice.The output voltage is 900 mV,the power supply can reduce to 1.1 V,and the temperature coefficient is 8.1×10-6/℃.

关 键 词：带隙基准 温度系数 低电源电压 

分 类 号：TN47[电子电信—微电子学与固体电子学]