表面为二维光子晶体结构的AlGaInP系发光二极管的研究  

AlGaInP LED with surface structure of two-dimensional photonic crystal

作　　者：陈依新[1] 郑婉华[2] 陈微[2] 陈良惠[2] 汤益丹[1] 沈光地[1] 

机构地区：[1]北京工业大学光电子技术实验室,北京100124 [2]中国科学院半导体研究所,北京100083

出　　处：《物理学报》2010年第11期8083-8087,共5页Acta Physica Sinica

基　　金：国家高技术研究发展计划(批准号:2006AA03A121;2008AA03Z402);国家重点基础研究发展计划(批准号:2006CB604902;2006CB921705);北京市自然科学基金(批准号:4092007)资助的课题~~

摘　　要：近年来,GaN基光子晶体发光二极管(light emitting diode,LED)的研究已经取得了一定的进展,利用光子晶体的光子带隙效应和光栅衍射原理,在LED上制作光子晶体结构将会提高出光效率.本文为了提高AlGaInP系LED的光提取效率,分析了常规LED光提取效率受到限制的原因,将光子晶体结构引入了AlGaInP系LED的器件结构设计,通过理论分析与实验验证,结果显示:光子晶体结构对于提高AlGaInP系LED的光提取效率同样起到了明显的效果,引入光子晶体后,LED的输出光强比常规结构LED平均提高了16%.Some progress in the research of GaN based LED with photonic crystal structure has been made recently.Based on the photonic crystal＇s photonic band gap effect and photon grating diffraction principle,the extraction efficiency of LED with photonic crystal can be improved.In this paper,the restriction on AlGaInP LED＇s extraction efficiency is analyzed,and the photonic crystal is introduced in to the AlGaInP LED to improve the extraction efficiency.The theoretical analyses and the experiment results show that the output luminous intensity of LED with photonic crystal is improved by 16% ,which results from some effect of the GaN based LED with photonic crystal.

关 键 词：AlGaInP系LED 光子晶体 光提取效率 光强 

分 类 号：TN312.8[电子电信—物理电子学]