RF CMOS modeling:a scalable model of RF-MOSFET with different numbers of fingers  

作　　者：余裕宁 孙玲玲 刘军 

机构地区：[1]Key Laboratory of RF Circuits and Systems of Ministry of Education,Hangzhou Dianzi University

出　　处：《Journal of Semiconductors》2010年第11期33-37,共5页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(No.60706002);the Scientific and Technologic Cooperation Foundation of the Yangtze River Delta Area of China(Nos.08515810103,2008C16017)

摘　　要：A novel scalable model for multi-finger RF MOSFETs modeling is presented.All the parasitic components, including gate resistance,substrate resistance and wiring capacitance,are directly determined from the layout.This model is further verified using a standard 0.13μm RF CMOS process with nMOSFETs of different numbers of gate fingers,with the per gate width fixed at 2.5μm and the gate length at 0.13μm.Excellent agreement between measured and simulated S-parameters from 100 MHz to 20 GHz demonstrate the validity of this model.A novel scalable model for multi-finger RF MOSFETs modeling is presented.All the parasitic components, including gate resistance,substrate resistance and wiring capacitance,are directly determined from the layout.This model is further verified using a standard 0.13μm RF CMOS process with nMOSFETs of different numbers of gate fingers,with the per gate width fixed at 2.5μm and the gate length at 0.13μm.Excellent agreement between measured and simulated S-parameters from 100 MHz to 20 GHz demonstrate the validity of this model.

关 键 词：RF-MOSFETs scalable model parasitic components layout-based 

分 类 号：TN386[电子电信—物理电子学]