Improved light extraction of wafer-bonded AlGalnP LEDs by surface roughening  

作　　者：刘自可 高伟 徐晨 邹德恕 秦园 郭靖 沈光池 

机构地区：[1]Key Laboratory of Opto-Electronics Technology,Ministry of Education,Beijing University of Technology

出　　处：《Journal of Semiconductors》2010年第11期52-54,共3页半导体学报（英文版）

基　　金：Project supported by the Natural Science Foundation of Beijing,China(No.4092007);the National High Technology Research and Development Program of China(No.2008AA03Z402);the Doctoral Program Foundation of Beijing,China(No.X0002013200801);the Eighth BJUT Technology Fund for Postgraduate Students,China

摘　　要：By using the wafer bonding technique and wet etching process,a wafer bonded thin film AlGaInP LED with wet etched n-AlGaInP surfaces was fabricated.The morphology of the etched surface exhibits a pyramid-like feature.The wafer was cut into 270×270μm2 chips and then packaged into TO-18 without epoxy resin.With 20-mA current injection,the light intensity and output power of LED-Ⅰwith surface roughening respectively reach 315 mcd and 4.622 mW,which was 1.7 times higher than that of LED-Ⅱwithout surface roughening.The enhancement of output power in LED-Ⅰcan be attributed to the pyramid-like surface,which not only reduces the total internal reflection at the semiconductor-air interface but also effectively guides more photons into the escape angle for emission from the LED device.By using the wafer bonding technique and wet etching process,a wafer bonded thin film AlGaInP LED with wet etched n-AlGaInP surfaces was fabricated.The morphology of the etched surface exhibits a pyramid-like feature.The wafer was cut into 270×270μm2 chips and then packaged into TO-18 without epoxy resin.With 20-mA current injection,the light intensity and output power of LED-Ⅰwith surface roughening respectively reach 315 mcd and 4.622 mW,which was 1.7 times higher than that of LED-Ⅱwithout surface roughening.The enhancement of output power in LED-Ⅰcan be attributed to the pyramid-like surface,which not only reduces the total internal reflection at the semiconductor-air interface but also effectively guides more photons into the escape angle for emission from the LED device.

关 键 词：AlGalnP light-emitting diodes metal bonding surface roughening 

分 类 号：TN312.8[电子电信—物理电子学] P618.130.2[天文地球—矿床学]