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机构地区:[1]Institute of Microelectronics,Tsinghua University
出 处:《Journal of Semiconductors》2010年第11期72-77,共6页半导体学报(英文版)
基 金:Project supported by the National Natural Science Foundation of China(No.60906010)
摘 要:This paper presents an 8-bit sub-threshold microprocessor which can be powered by an integrated photosensitive diode.With a custom designed sub-threshold standard cell library and 1 kbit sub-threshold SRAM design, the leakage power of 58 nW,dynamic power of 385 nW @ 165 kHz,EDP 13 pJ/inst and the operating voltage of 350 mV are achieved.Under a light of about 150 kLux,the microprocessor can run at a rate of up to 500 kHz.The microprocessor can be used for wireless-sensor-network nodesThis paper presents an 8-bit sub-threshold microprocessor which can be powered by an integrated photosensitive diode.With a custom designed sub-threshold standard cell library and 1 kbit sub-threshold SRAM design, the leakage power of 58 nW,dynamic power of 385 nW @ 165 kHz,EDP 13 pJ/inst and the operating voltage of 350 mV are achieved.Under a light of about 150 kLux,the microprocessor can run at a rate of up to 500 kHz.The microprocessor can be used for wireless-sensor-network nodes
关 键 词:power harvesting wireless-sensor-network sub-threshold microprocessor photosensitive diode
分 类 号:TP368.1[自动化与计算机技术—计算机系统结构]
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