A curvature calibrated bandgap reference with base-emitter current compensating in a 0.13μm CMOS process  

A curvature calibrated bandgap reference with base-emitter current compensating in a 0.13μm CMOS process

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作  者:马卓 谭晓强 谢伦国 郭阳 

机构地区:[1]College of Computer,National University of Defense Technology

出  处:《Journal of Semiconductors》2010年第11期82-87,共6页半导体学报(英文版)

基  金:Project supported by the National New Century Excellent Talents in University,Program for Changjiang Scholars and Innovative Research Team in University

摘  要:In bandgap references,the effect caused by the input offset of the operational amplifier can be effectively reduced by the utilization of cascade bipolar junction transistors(BJTs).But in modern CMOS logic processes,due to the small value ofβ,the base-emitter path of BJTs has a significant streaming effect on the collector current,which leads to a large temperature drift for the reference voltage.To solve this problem,a base-emitter current compensating technique is proposed in a cascade BJT bandgap reference structure to calibrate the curvature of the output voltage to temperature.Experimental results based on the 0.13μm logic CMOS process show that the reference voltage is 1.238 V and the temperature coefficient is 6.2 ppm/℃within the range of-40 to 125℃.In bandgap references,the effect caused by the input offset of the operational amplifier can be effectively reduced by the utilization of cascade bipolar junction transistors(BJTs).But in modern CMOS logic processes,due to the small value ofβ,the base-emitter path of BJTs has a significant streaming effect on the collector current,which leads to a large temperature drift for the reference voltage.To solve this problem,a base-emitter current compensating technique is proposed in a cascade BJT bandgap reference structure to calibrate the curvature of the output voltage to temperature.Experimental results based on the 0.13μm logic CMOS process show that the reference voltage is 1.238 V and the temperature coefficient is 6.2 ppm/℃within the range of-40 to 125℃.

关 键 词:bandgap reference CMOS BJT base current compensating 

分 类 号:TN432[电子电信—微电子学与固体电子学]

 

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