Impact of the displacement damage in channel and source/drain regions on the DC characteristics degradation in deep-submicron MOSFETs after heavy ion irradiation  

作　　者：薛守斌 黄如 黄德涛 王思浩 谭斐 王健 安霞 张兴 

机构地区：[1]Institute of Microelectronics,Peking University

出　　处：《Chinese Physics B》2010年第11期597-603,共7页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grants No. 60625403,60836004,60925015 and 90207004);the Major State Basic Research Development Program of China (973 Program) (Grant No. 2006CB302701)

摘　　要：This paper mainly reports the permanent impact of displacement damage induced by heavy-ion strikes on the deepsubmicron MOSFETs. Upon the heavy ion track through the device, it can lead to displacement damage, including the vacancies and the interstitials. As the featured size of device scales down, the damage can change the dopant distribution in the channel and source/drain regions through the generation of radiation-induced defects and thus have significant impacts on their electrical characteristics. The measured results show that the radiation-induced damage can cause DC characteristics degradations including the threshold voltage, subthreshold swing, saturation drain current, transconductanee, etc. The radiation-induced displacement damage may become the dominant issue while it was the secondary concern for the traditional devices after the heavy ion irradiation. The samples are also irradiated by Co- 60 gamma ray for comparison with the heavy ion irradiation results. Corresponding explanations and analysis are discussed.This paper mainly reports the permanent impact of displacement damage induced by heavy-ion strikes on the deepsubmicron MOSFETs. Upon the heavy ion track through the device, it can lead to displacement damage, including the vacancies and the interstitials. As the featured size of device scales down, the damage can change the dopant distribution in the channel and source/drain regions through the generation of radiation-induced defects and thus have significant impacts on their electrical characteristics. The measured results show that the radiation-induced damage can cause DC characteristics degradations including the threshold voltage, subthreshold swing, saturation drain current, transconductanee, etc. The radiation-induced displacement damage may become the dominant issue while it was the secondary concern for the traditional devices after the heavy ion irradiation. The samples are also irradiated by Co- 60 gamma ray for comparison with the heavy ion irradiation results. Corresponding explanations and analysis are discussed.

关 键 词：CMOS devices displacement damage heavy ion irradiation gamma ray irradiation 

分 类 号：TN386.1[电子电信—物理电子学] O571.6[理学—粒子物理与原子核物理]