氮化硅结合碳化硅铝电解槽侧壁材料的应用及抗侵蚀性研究现状  

Application of Si3N4-SiC Side Wall Materials in Aluminum Reduction Cells and Researching Present Situation of Its Erosion-resistance Performance

作　　者：高翔 

机构地区：[1]新疆众和股份有限公司,新疆维吾尔自治区乌鲁木齐830013

出　　处：《金属材料与冶金工程》2010年第5期54-57,共4页Metal Materials and Metallurgy Engineering

摘　　要：对目前氮化硅结合碳化硅侧壁材料抗侵蚀性能的研究做了较为全面的总结,主要介绍了研究抗侵蚀性能所采用的方法、实验条件以及得到的结论,并对氮化硅结合碳化硅侧壁材料的实际使用情况做了简要概述。Researching development on erosion-resistance performance of Si3N4 bonding SiC side wall materials in aluminum reduction cells has been summarized comprehensively in this paper. The paper introduced mainly the methods how to study on erosion- resisting characteristics, the conditions of experiment and the researching conclusions, moreover elaborated simply the Si3N4-SiC employment situation in some factories.

关 键 词：SI3N4-SIC 侧壁材料 抗侵蚀性 

分 类 号：TQ151.15[化学工程—电化学工业]