电子注入在介质中输运的数值模拟  

NUMERICAL SIMULATION OF IMPLANTED ELECTRONS TRANSPORT IN THE MATERIALS

作　　者：吴克勇[1] 胡翠英[1] 

机构地区：[1]广州暨南大学物理系

出　　处：《计算物理》1999年第2期183-191,共9页Chinese Journal of Computational Physics

基　　金：国务院侨办自然科学基金

摘　　要：针对非晶固态材料“短程有序而长程无序”的结构特点，从电子多次散射理论出发，在电子入射单元系介质的模型基础上，建立了能反映非晶固态材料结构特点的“散射单元”模型，用ＭｏｎｔｅＣａｒｌｏ方法和电子输运方程模拟了电子入射在非晶材料中的输运过程，研究了电子在输运过程中能量损失分布的情况。此外，还考虑了多元系的成分特点。给出了计算结果。Based on the model of the electron beam irradiating the matter having only single kind of atom and the elctron multiply scattering theory,this paper has constructed a scattering unit model mirroring the structure of the amprphous materials which have the characteristic of short range order but long range disorder.The electron energy loss distributions are calculated by means of Monte Carlo simulation and transport equation in the scattering unit model.In addition,the structure property of materials including several kinds of atoms are took into account.The calculatd results are given and discussed.

关 键 词：非晶态 短程有序 电子注入 电子输运 介质 

分 类 号：O481[理学—固体物理]