超高速集成电路用高纯硼粉的研制  

Preparation Study of High Purity Boron Powder for Ultrahigh Speed Integrated Circuit

作　　者：李萍乡[1] 窦维喜[1] 

机构地区：[1]北京有色金属研究总院

出　　处：《稀有金属》1999年第3期198-200,共3页Chinese Journal of Rare Metals

摘　　要：研究了溴化合成还原法制取高纯硼粉的工艺及硼粉的结构、颗粒外貌等特征。研究结果表明，所制得的硼粉纯度达到９９９９９％以上，硼的主相为α菱方晶体（ａ＝０５０５７ｎｍ、α＝５８．０６°），还含有少量βＢ晶体（ａ＝１．０９２５１ｎｍ、ｃ＝２．３８１４ｎｍ）。产品粒度细（＜１０μｍ），有利于应用。The process of manufacturing high purity boron powder by bromatesynthetizing reduction method, as well as the structure and the morphology of the boron powder was studied. The results show that the purity of the boron powder is better than 99.999% and the main phase of the boron is a rhombohedrial cryctalline with Lattice Constant a=0.5057 nm and the included angle =58.06, including also a small amount of boron phase having the lattice Constant a=1.09251 nm, and c0=2.3814 nm. The graininess of the powder is fine (<1.0 m) and favourable for its applications.

关 键 词：高纯硼粉 制备工艺 超高速集成电路 研制 

分 类 号：TF123.32[冶金工程—粉末冶金] TN4[冶金工程—冶金物理化学]