固体衬底上超薄膜表面的低能电子背散射系数计算研究  

M-C simulation of low energy electron backscattering from ultra-thin film on a substrate

作　　者：卓俊[1] 牛胜利[1] 朱金辉[1] 黄流兴[1] 

机构地区：[1]西北核技术研究所,西安710024

出　　处：《核技术》2010年第11期828-831,共4页Nuclear Techniques

摘　　要：应用单次碰撞直接Monte Carlo方法模拟了keV级低能电子在超薄膜/固体衬底结构材料中的输运过程,计算研究了不同能量低能电子在几十nm厚超薄膜表面的背散射系数。给出了几种常用超薄膜/固体衬底结构的电子背散射系数r随薄膜厚度D的变化曲线,及r-D曲线线性段背散射常数C随电子入射能量的变化关系。结果表明,在低能电子入射下,r-D曲线初始段存在单一的线性区,背散射常数C随入射电子能量减小而增加,并最终达到一极大值,该规律可作为薄膜厚度测量中选择电子能量的重要参考依据。Backscattering coefficients of low energy electron beams impinging on ultra-thin films on a＇ substrate were simulated with Monte Carlo code. All the interaction events experienced by single electron were simulated in chronological succession. The dependence of backscattering coefficient, r, on thickness of the thin film, D, was calculated and analyzed. The results show that there is one linear range, and the slope C of the linear range will arises until it reaches a maximum value while the energy of impinging electron decreases. This will provide reference for energy of incidence electron selection in ultra-thin film measurement.

关 键 词：低能电子 背散射 直接Monte CARLO方法 超薄膜 

分 类 号：O562.5[理学—原子与分子物理]