绿光发光材料ZnTe的Raman光谱研究  

Study on Raman spectrum of green light-emitting semiconductor ZnTe

作　　者：谷智[1] 李国强[1] 介万奇[1] 

机构地区：[1]西北工业大学凝固技术国家重点实验室,陕西西安710072

出　　处：《功能材料》2010年第11期2038-2040,共3页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(50872111)

摘　　要：研究了表面处理工艺对ZnTe的Raman光谱的影响,结果表明,ZnTe的LO(Γ)特征峰对表面处理工艺敏感,该特征峰的强度与半峰宽的比值(I/H)越大,晶体表面晶格完整性越高。对机械抛光的ZnTe晶片依次进行化学抛光、去除表面氧化物,I/H值分别出现不同程度的增加,表面晶格完整性逐渐提高。以514.5nm激光激发ZnTe,荧光峰掩盖了200～3000cm-1内Raman散射峰,拟合得到ZnTe的禁带宽度是2.255eV。The effects of surface treatments on Raman spectrum of ZnTe were studied.The experiment shows that LO（Γ）character peak of ZnTe is susceptible to surface treatments.The higher the value I/H,i.e.,the ratio of peak intensity to half-peak breadth for LO（Γ）peak,the better lattice perfection of ZnTe surface.After mechanical polishing,chemical polishing and oxide removing on surface,the value I/Hhad been increased at different degrees and the better lattice perfection had been improved gradually.At 514.5nm laser excitation wavelength,Raman scattering spectrum of ZnTe were submerged by the micro-photoluminescence peak in range of 200-3000cm^-1.By fitting,the band gap of ZnTe was calculated to be 2.255eV.

关 键 词：ZNTE 表面处理 RAMAN光谱 显微荧光光谱 

分 类 号：TN304.2[电子电信—物理电子学]