孔隙率对氧化锌/多孔硅光致发光的影响  

Influence of Porosity on the Photoluminescence of ZnO/Porous Si

作　　者：齐红霞[1] 赵波[1] 

机构地区：[1]徐州师范大学物理与电子工程学院,江苏徐州221116

出　　处：《郑州大学学报（理学版）》2010年第4期61-63,共3页Journal of Zhengzhou University:Natural Science Edition

基　　金：徐州师范大学科研基金资助项目;编号09XLB04

摘　　要：用电化学方法制备不同孔隙率的多孔硅,然后用脉冲激光沉积的方法,以多孔硅为衬底生长氧化锌(ZnO)薄膜,研究多孔硅的孔隙率对ZnO薄膜的质量和光致发光谱的影响,用X射线衍射仪和扫描电子显微镜表征ZnO薄膜的结构性质.结果表明,当多孔硅的孔隙率较大时,沉积的ZnO薄膜为非晶结构.沉积上ZnO薄膜之后,多孔硅的发光谱蓝移,由于ZnO薄膜缺陷较多,其深能级发光较强.ZnO的深能级发光与多孔硅的橙红光相叠加,得到了可见光区宽的光致发光带,呈现白光发射.Porous silicon with different porosities is prepared by anodization of single-crystal Si wa- fers. ZnO films are then deposited on porous silicon substrate by pulsed laser deposition. The in- fluence of porosity on the quality and photoluminescence of ZnO films is studied. X-ray diffrac- tion （XRD） and scanning electron microcopy （SEM） are used to study the structure properties of ZnO. The XRD pattern shows ZnO films are non-crystalline structure when deposited on bigger porosity substrate. The photoluminescence of the porous silicon is blue-shifted after ZnO film deposition. The deep level emission of ZnO is strong due to the defects in the films. The red e- mission from porous silicon layers combined with the deep level emission from ZnO films, a broad visible emission （white light） is obtained.

关 键 词：多孔硅 氧化锌 光致发光 

分 类 号：O484.41[理学—固体物理]