Effect of Indium Ambient on Electrical Properties of Mg-Foped AlxGa1-xN  

作　　者：许正昱 秦志新 桑立雯 张延召 沈波 张国义 赵岚 张向锋 成彩晶 孙维国 

机构地区：[1]State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 [2]Luoyang Optoelectronic Institute, PO. Box 030, Luoyang 471009

出　　处：《Chinese Physics Letters》2010年第12期181-183,共3页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 60876041, 60577030, 60736033 and 10774001, and the National Basic Research Program of China under Grant Nos 2006CB604908 and 2006CB921607, and the National Key Basic Research Program of China under No TG2007CB307004.

摘　　要：Mg-doped AlxGa1-xN epilayers were grown on AlN/sapphire templates by metal organic chemical vapor depo- sition （MOCVD） using an indium-assisted growth method. At room temperature, the resistivity of Mg-doped Alo.43Gao.57N epilayer grown under indium （In） ambient is of the order of 10^4Ω.cm, while the resistivity of Mg-doped Al0.43Ga0.57N grown without In assistance is of the order of 10^6Ω.cm. The ultraviolet light-emitting diodes （UV-LEDs） using the In-assisted Mg-doped Al0.43Ga0.57N as the p-type layers were fabricated to verify the function of indium ambient. It is found that there are a lower turn-on voltage and a lower diode series resistance in the UV-LEDs fabricated with p-type Al0.43Ga0.57 N layers grown under In-ambient.Mg-doped AlxGa1-xN epilayers were grown on AlN/sapphire templates by metal organic chemical vapor depo- sition （MOCVD） using an indium-assisted growth method. At room temperature, the resistivity of Mg-doped Alo.43Gao.57N epilayer grown under indium （In） ambient is of the order of 10^4Ω.cm, while the resistivity of Mg-doped Al0.43Ga0.57N grown without In assistance is of the order of 10^6Ω.cm. The ultraviolet light-emitting diodes （UV-LEDs） using the In-assisted Mg-doped Al0.43Ga0.57N as the p-type layers were fabricated to verify the function of indium ambient. It is found that there are a lower turn-on voltage and a lower diode series resistance in the UV-LEDs fabricated with p-type Al0.43Ga0.57 N layers grown under In-ambient.

分 类 号：TN312.8[电子电信—物理电子学] S831[农业科学—畜牧学]