Fabrication and Characteristics of AIInN/A1N/GaN MOS-HEMTs with Ultra-Thin Atomic Layer Deposited Al2O3 Gate Dielectric  

作　　者：毛维 张进成 薛军帅 郝跃 马晓华 王冲 刘红侠 许晟瑞 杨林安 毕志伟 梁晓祯 张金风 匡贤伟 

机构地区：[1]Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xidian University Xi'an 710071

出　　处：《Chinese Physics Letters》2010年第12期199-202,共4页中国物理快报（英文版）

基　　金：Supported by the Dandamental Research Funds for the Central Universities under Grant No JY10000925002, the National Key Science and Technology Special Project under Grant No 2008ZX01002-002, and the National Natural Science Foundation of China under Grant Nos 60736033, 60976068 and 61076097.

摘　　要：Al0.85In0.15N//AlN/GaN metal-oxide-semiconductor high electron mobility transistors （MOS-HEMTs） employing a 3-nm ultra-thin atomic-layer deposited （ALD） Al2O3 gate dielectric layer are reported. Devices with 0.6μm gate lengths exhibit an improved maximum drain current density of 1227mA/mm at a gate bias of 3 V, a peak transeonductance of 328mS/mm, a cutoff frequency fr of 16 GHz, a maximum frequency of oscillation fmax of 45 GHz, as well as significant gate leakage suppression in both reverse and forward directions, compared with the conventionM Al0.85In0.15N/AlN/GaN HEMT. Negligible C - V hysteresis, together with a smaller pinch-off voltage shift, is observed, demonstrating few bulk traps in the dielectric and high quality of the Al2O3/AIInN interface, it is most notable that not only the transconductance profile of the MOS-HEMT is almost the same as that of the conventional HEMT with a negative shift, but also the peak transconduetance of the MOS-HEMT is increased slightly. It is an exeitin~ inwrovement in the transconductance performance.Al0.85In0.15N//AlN/GaN metal-oxide-semiconductor high electron mobility transistors （MOS-HEMTs） employing a 3-nm ultra-thin atomic-layer deposited （ALD） Al2O3 gate dielectric layer are reported. Devices with 0.6μm gate lengths exhibit an improved maximum drain current density of 1227mA/mm at a gate bias of 3 V, a peak transeonductance of 328mS/mm, a cutoff frequency fr of 16 GHz, a maximum frequency of oscillation fmax of 45 GHz, as well as significant gate leakage suppression in both reverse and forward directions, compared with the conventionM Al0.85In0.15N/AlN/GaN HEMT. Negligible C - V hysteresis, together with a smaller pinch-off voltage shift, is observed, demonstrating few bulk traps in the dielectric and high quality of the Al2O3/AIInN interface, it is most notable that not only the transconductance profile of the MOS-HEMT is almost the same as that of the conventional HEMT with a negative shift, but also the peak transconduetance of the MOS-HEMT is increased slightly. It is an exeitin~ inwrovement in the transconductance performance.

分 类 号：TN386[电子电信—物理电子学] TN305