外延生长Ge_(1-x)Sn_x合金的研究进展  

Progress in the Epitaxy Growth of Ge_(1-x)Sn_x Alloy

作　　者：苏少坚[1] 汪巍[1] 胡炜玄[1] 张广泽[1] 薛春来[1] 左玉华[1] 成步文[1] 王启明[1] 

机构地区：[1]中国科学院半导体研究所集成光电子学国家重点实验室,北京100083

出　　处：《材料导报》2010年第21期90-93,117,共5页Materials Reports

基　　金：973课题(2007CB613404);集成光电子学国家重点实验室自主研究课题;中国科学院半导体研究所青年人才领域前沿项目(ISCAS2009T01)

摘　　要：Ge1-xSnx是一种新型的Ⅳ族材料,具有广阔的应用前景,但是其生长存在许多困难,尤其是Sn易于分凝。采用离子轰击和快速变温等方法可以有效地抑制Sn的分凝,但是所生长的材料的热稳定性都比较差。采用化学气相沉积法获得了较高质量的Ge1-xSnx合金,但是所用的Sn气体源难以获得。综述了Ge1-xSnx合金外延生长的研究进展。Ge1-xSnx alloy is a novel group IV material. Although Ge1-xSnx alloy has many potential applications, it is difficult to grow, especially the easily segregation of Sn to surfaces. Ion bombardment and fast temperature-modulation technique are efficient to inhibit the segregation of Sn, but the thermal stability of the material is still low. High quality Ge1-xSnx, alloy can be grown by chemical vapor deposition method, but the Sn gas source is hard to synthesize. The epitaxial growth of Ge1-xSnx alloy is reviewed.

关 键 词：Ge1-xSnx 合金 外延 分凝 

分 类 号：TN304.054[电子电信—物理电子学]