CZ硅单晶中原生缺陷的特性  

Behaviour of Grown in Defects in Czochralski Silicon Crystals

作　　者：施锦行[1] 

机构地区：[1]中南工业大学应用物理与热能工程系

出　　处：《半导体技术》1999年第3期41-44,共4页Semiconductor Technology

摘　　要：描述了ＣＺ硅单晶中原生缺陷的分类、形成机理及它对相关器件性能的影响，并就其控制和消除的方法进行了讨论。In this paper,the classification and formation mechanism for grown in defects in czochralski silicon crystals are described.The effect of grown in defects on properties of relative devices are also elucidated.Finally,we discuss some methods which are utilized to control and annihilate the grown in defects.

关 键 词：硅 原生缺陷 缺陷控制 

分 类 号：TN304.12[电子电信—物理电子学]