新型双弯曲磁过滤阴极真空电弧沉积系统的磁场模拟计算  

Simulation of Magnetic Field Distribution in Doubly-Bent Filter Cathode of Vacuum Arc Film Growth Setup

作　　者：李洪波 孙丽丽[1] 吴国松 代伟 周毅 汪爱英[1] 

机构地区：[1]中国科学院宁波材料技术与工程研究所表面工程与再制造事业部,宁波315201

出　　处：《真空科学与技术学报》2010年第6期614-620,共7页Chinese Journal of Vacuum Science and Technology

基　　金：中国科学院重大装备研制项目(YZ200833);浙江省自然科学基金项目(Y4100312)

摘　　要：本文用ANSYS软件对新型的45°双弯曲磁过滤阴极真空电弧沉积系统中的磁场分布进行了模拟计算,并结合等离子体传输和电弧源弧斑运行稳定性进行了分析。在建立的数学模型基础上,分别研究了磁过滤弯管磁场空间分布对拟定的不同出射方向上的111个碳离子束的传输行为影响,和外加永久磁体对电弧源附近磁场空间分布的影响。结果表明,在优化的磁过滤弯管磁场空间分布情况下,111个碳离子束流可全部通过磁过滤弯管,并高效传输到基材表面。当电弧靶源后部的外加永久磁体磁化方向与弯管上的磁化方向相反,且磁矫顽力大于600 kA/m时,阴极靶弧源附近的磁力线空间分布更利于控制阴极弧斑长时间运行稳定性,这对延长弧斑寿命、提高等离子体的沉积效率、提高靶材表面刻蚀均匀性和获得高性能的ta-C薄膜生长具有重要理论意义。The magnetic field distributions around the arc source in the 45°doubly bent filtering cathode vacuum arc（FCVA） film growth system and its impacts on the plasma beam transport and stability of arc spot were modeled and simulated with ANSYS software package.The simulated results show that under optimized magnetic field distribution,all of the 111 carbon ions,shooting out in different directions,are capable of smoothly passing the doubly-bent magnetic filter,and successfully touching down on the substrate.Interesting finding is that if a permanent magnet with a coercive force of 600 kA/m,is installed behind the arc cathode,in such a way that its field opposes to that in the bent tube,the resultant magnetic field distribution improves the stability of arc spots with more benefits,such as longer arc spot lifetime,higher deposition rate,more uniform target sputtering,and better tetrahedral amorphous carbon（ta-C） films.

关 键 词：双弯曲磁过滤阴极电弧 磁场分布 有限元法 ta-C薄膜 

分 类 号：TB383[一般工业技术—材料科学与工程]