运算放大器总剂量效应的PSPICE模拟计算  

Simulation by PSPICE for the Total Radiation Dose Effects of Operational Amplifiers

作　　者：赵雯[1] 郭红霞[1] 何宝平[1] 张凤祁[1] 罗尹虹[1] 姚志斌[1] 

机构地区：[1]西北核技术研究所,陕西西安710024

出　　处：《核电子学与探测技术》2010年第10期1297-1302,共6页Nuclear Electronics & Detection Technology

摘　　要：对双极及体硅CMOS工艺的单一和复合运算放大器的总剂量效应进行了PSPICE模拟计算,模拟通过改变运算放大器总剂量效应的敏感参数来实现,双极运算放大器的敏感参数是补偿电容和晶体管的电流放大倍数,CMOS型运算放大器的敏感参数是MOS管的阈值电压。模拟结果表明随着总剂量辐照的增加,双极及CMOS运算放大器出现增益降低,带宽变小,转换速率下降的现象;在总剂量辐照效应下,两种工艺的复合运算放大器的抗总剂量性能优于单一运算放大器。It introduces the simulation by PSPICE software for the total radiation dose effects of single and composite operational amplifiers manufactured in bipolar and CMOS processes.The simulation is performed by changing sensitive parameters of operational amplifiers.The sensitive parameters are compensating capacitance and transistor current gain for BJT operational amplifiers and threshold voltage for CMOS operational amplifiers.Simulation results indicate that the gain is decreased,the bandwidth is narrowed and the slew rate is down as the total dose irradiation is increased.In addition,the total radiation dose effects resistivity of composite operational amplifiers is superior to single operational amplifiers＇.

关 键 词：总辐射剂量效应 运算放大器 PSPICE 

分 类 号：TN386.1[电子电信—物理电子学]