SiPM电子学模型的建立与参数提取  

Modeling and Parameters Extraction Procedure of a Silicon Photomultiplier(SiPM)

作　　者：袁俊[1] 胡小波[1] 梁琨[1] 杨茹[1] 韩德俊[1] 

机构地区：[1]北京师范大学核科学与技术学院,北京100875

出　　处：《核电子学与探测技术》2010年第10期1329-1333,共5页Nuclear Electronics & Detection Technology

基　　金：国家自然科学基金资助项目(10775016)

摘　　要：以SPAD等效电路为基础建立了简单实用的SiPM的电子学模型,对模型中各电学参数及其对器件性能的影响进行了详细探讨,并以日本滨松公司的MPPC器件为例介绍了模型参数的提取方法。该电子学模型可应用于SiPM器件性能优化和前端电子学设计。Based on the equivalent circuit of a SPAD,we have established a simple and useful electrical model of SiPM,and the model parameters＇ Effects to the detector＇s performance are discussed in detail.An extraction procedure for the parameters involved in this model is proposed,based on suitable measurements performed on a MPPC detector of HAMAMATSU.The work is helpful to SiPM device optimizing and properly design of the front-end electronics.

关 键 词：电子学模型 参数提取 SIPM SPAD MPPC 

分 类 号：TN3[电子电信—物理电子学]