耐电晕聚酰亚胺薄膜表面电荷特性  被引量:5

Characteristics of Surface Charges on Corona-Resistant Polyimide Films

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作  者:孙志[1,2,3] 韩柏[1,2,3] 张冬[1,2,3] 宋伟[1,2,3] 何丽娟[2,3] 王暄[1,2,3] 雷清泉[1,2,3] 

机构地区:[1]哈尔滨理工大学电气与电子工程学院,哈尔滨150080 [2]工程电介质及其应用技术教育部重点实验室,哈尔滨150080 [3]黑龙江省电介质工程重点实验室,哈尔滨150080

出  处:《纳米技术与精密工程》2010年第6期532-536,共5页Nanotechnology and Precision Engineering

基  金:国家重点基础研究发展计划(973计划)资助项目(2009CB724505);国家自然科学基金资助项目(50977020)

摘  要:为了解微纳米尺度下聚合物绝缘材料表面电荷生成、发展规律和机理,利用电场力显微镜(electrostatic force microscope,EFM)研究了两种聚酰亚胺薄膜的表面电荷生成及其衰减特性.采用EFM的导电探针在聚酰亚胺薄膜表面注入电荷,并对产生的电荷进行原位表征,结果表明原始(100 HN)和耐电晕(100 CR)两种聚酰亚胺薄膜上电荷生成和衰减特性不同.耐电晕薄膜被注入的表面电荷数量少且注入后衰减较快,其衰减服从指数规律,衰减时间常数为19.9 min;原始薄膜被注入的电荷量较多,衰减时间常数为48.1 min.分析表明,耐电晕薄膜中由于掺杂了Al2O3成分,使得材料的介电常数提高、电阻率下降.介电常数提高使得金属-电介质界面势垒提高,增加了电荷注入难度,导致表面电荷数量少;电阻率下降使得电荷消散速度加快.In order to study the generating and decaying rule and mechanism of surface charges on the insulated films on micro/nano scale,electrostatic force microscope(EFM) was applied to investigate the origin and decay properties of surface charges on two kinds of polyimide(PI) films.Charges were inject ̄ed onto the surface of the polyimide films using the conductive probe of EFM and the charges generated were characterized by EFM in situ,results of which indicate that the charges on original(100 HN) and corona-resistant(100 CR) polyimide films have different origin and decay properties.The injected surface charges onto the corona-resistant polyimide films were fewer and decayed quicker after injection,which was in accordance with the exponential rule and had the time constant of 19.9 min.The injected charges onto the original films were more,with the time constant of 48.1 min.Analysis shows that the addition of Al2O3 particles to the corona-resistant films effectively increases the dielectric constant and de ̄creases the resistivity of the material.It is difficult to inject charges into 100 CR for Schottky effect between metal and dielectric,and the smaller decay time constant corresponds to the decrease of resistivity.

关 键 词:电场力显微镜(EFM) 表面电荷衰减 耐电晕聚酰亚胺 肖特基效应 

分 类 号:TM215.1[一般工业技术—材料科学与工程]

 

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