低频电磁辐射与出生缺陷相关性的调查分析  

The Relationship between Low Frequency Electric and Magnetic Fields and Birth Defects in the Rural of Ningxia

作　　者：胡继宏[1] 伍山 刘兰[1] 赵燚[1] 张波 

机构地区：[1]宁夏医科大学公共卫生学院,银川750004 [2]宁夏军区门诊部,银川750021 [3]宁夏回族自治区卫生厅疾控处,银川750001

出　　处：《宁夏医科大学学报》2010年第8期883-887,共5页Journal of Ningxia Medical University

基　　金：宁夏回族自治区卫生厅项目(2008035)

摘　　要：目的探讨低频电磁辐射与出生缺陷的关系。方法在2008年宁夏五个行政市22个市县(区)出生缺陷普查的基础上,按照国际出生缺陷监测情报交换所定义出生缺陷,并将其作为病例,无出生缺陷作为对照。2007年1月1日至12月31日出生的所有婴儿10792名及其母亲10928名,10527名婴儿(97.5%)接受调查且资料完整。结果本次调查出生缺陷发生率为134.89/万人,其中低频电磁辐射组出生缺陷发生率为545.5/万人,高于对照组的127.7/万人(χ2=7.454,P=0.006)。进一步对孕母可能造成出生缺陷的危险因素(生育年龄、是否近亲结婚、孕期接触有毒有害的物质和微量元素的补充等)和胎儿因素(胎龄、出生体重、胎数等)及家庭经济收入等进行多因素Logistic回归分析,显示孕期接触低频电磁辐射是出生缺陷的独立危险因素(OR=5.68,95%CI 1.23～26.31)。结论孕期接触低频电磁辐射使出生缺陷发生的风险增加,必须予以预防。Objective To explore the relationship between low frequency electric and magnetic fields and birth defects and to provide scientific basis for the prevention of birth defects.Methods Infants who were born with birth defects within 2007 were taken as case group.And the others infants without birth defects were taken as control group.All information based on the census of birth defects in Ningxia in 2008.Results The rate of birth defects was 134.89 per ten thousands.The rate in the low frequency electric and magnetic group was 545.5 per ten thousands and it was significantly higher（χ2=7.454,P=0.006） compared with the rate in the control group（127.7 per thousands）.After adjusting for the risk factors of pregnant women（including production age,intermarriage,poison and intakes of microelements） and their infants（including fetal age,birth weights and numbers of fetal） and income of family,the low frequency electric and magnetic fields was independent risk factor of birth defects（OR=5.68,95%,CI：1.23-26.31）.Conclusion The low frequency electric and magnetic fields increased the possibilities of birth defects,so we must pay more attention to it.

关 键 词：电磁辐射 出生缺陷 调查研究 

分 类 号：R195[医药卫生—卫生统计学]