采用新型La0.07Sr0.93SnO3电极制备外延透明BiFe0.95Mn0.05O3铁电薄膜电容器  

FABRICATION OF EPITAXIAL AND TRANSPARENT BiFe_(0.95)Mn_(0.05)O_3 FERROELECTRIC CAPACITORS WITH La_(0.07)Sr_(0.93)SnO_3 ELECTRODES

作　　者：焦兴利[1] 王海峰[1] 刘亲壮[1] 訾玉宝[1] 吴文彬[1] 

机构地区：[1]合肥微尺度物质国家实验室,中国科学技术大学,合肥230026

出　　处：《低温物理学报》2010年第6期414-418,共5页Low Temperature Physical Letters

基　　金：国家自然科学基金项目(批准号:10874166和50721061);国家基础研究项目(批准号:2006CB922005和2009CB929502)资助的课题

摘　　要：本文使用脉冲激光沉积的方法在SrTiO3(STO)单晶衬底上采用一种新型的透明导电氧化物材料La0.07Sr0.93SnO3(LSSO)薄膜作为电极材料制备了BiFe0.95Mn0.05O3(BFMO)铁电薄膜电容器.XRD表征结果证实BF-MO/LSSO/STO外延异质结具有很好的单晶质量.光透过率的测试结果表明在500~2500nm的波长范围内,整个异质结的透光率与单纯STO衬底基片相似.在波长500nm附近BFMO出现吸收边,通过对吸收边进行(hνα)2-hν曲线拟合得到BFMO的直接光学带隙约为2.8eV.利用Pt作为上电极,我们测得了饱和的电滞回线,剩余极化Pr^60μC/cm2.In this work transparent and conductive La0.07Sr0.93SnO3（LSSO） films were employed as electrodes for fabrication of the epitaxial and transparent BiFe0.95Mn0.05O3（BFMO） ferroelectric capacitors,which were grown on SrTiO3（STO） substrates by the pulsed laser deposition method.The BFMO/LSSO/STO heterostructures show excellent single-crystalline quality as revealed by high-resolution X-ray diffractions and are transparent with transmittance comparable to that of pure STO substrates at wavelengths of 500～2500nm.A direct allowed band gap of 2.8 eV was estimated for the BFMO films by（hνα）^2-hν curve fitting.These capacitors show square polarization-electric field hysteresis loops with the remnant polarization Pr of ～60μC/cm^2.

关 键 词：铁酸铋 透明铁电电容器 脉冲激光沉积 

分 类 号：O484.42[理学—固体物理]