ns激光辐照硅光电探测器的损伤阈值  

Damage threshold of Si photoelectric detector irradiated by ns laser

作　　者：徐立君[1] 刘丽炜[1] 姜传军[2] 杨立鹏[1] 周鸣岐[1] 张喜和[1] 

机构地区：[1]长春理工大学理学院,吉林长春130022 [2]装甲兵技术学院,吉林长春130017

出　　处：《物理实验》2010年第11期8-11,共4页Physics Experimentation

摘　　要：以He-Ne激光作为参考光,采用反射光能量法,测量了ns激光辐照硅光电探测器的损伤阈值,并测量了不同功率密度的强激光辐照下探测器对参考光的反射率.实验结果表明,ns激光辐照硅光电探测器的损伤阈值为4.1×106W/cm2,在探测器被强激光损伤的初期阶段,探测器对参考光的反射率下降很快,继续增加入射激光的能量,探测器对参考光的反射率下降趋于平缓.According to the energy of the reflected beam,damage threshold of photoelectric detector under laser irradiation is measured.After irradiation of different power densities of He-Ne lasers,the reflectivity of the detector is measured.The experimental results indicate that ns laser damage threshold of photoelectric detector is 4.1×10^6 W/cm^2.In the first damage period,the reflectivity of the detector decreases rapidly,further increasing of the incident laser power intensity reduces the reflectivity of the detector smoothly.

关 键 词：损伤阈值 强激光辐照 功率密度 反射率 

分 类 号：TN241[电子电信—物理电子学]