Dy_2O_3掺杂对钛酸锶钡陶瓷结构性能的影响  

Effect of Dy_2O_3-doping on microstructure of BaSrTiO_3 ceramic

作　　者：李雨珖[1] 马铁成[1] 刘贵山[1] 吴凯卓[1] 冯俊[1] 冷小威[1] 

机构地区：[1]大连工业大学化工与材料学院,辽宁大连116034

出　　处：《大连工业大学学报》2010年第6期445-448,共4页Journal of Dalian Polytechnic University

摘　　要：采用草酸盐沉淀法，以硝酸锶、硝酸钡、钛酸丁酯和草酸为原料，Dy2O3为掺杂剂，制得了Ba0.6Sr0.4TiO3粉体，并于1250℃将其烧结成Ba0.4Sr0.4TiO3系电介质陶瓷。利用扫描电镜、X射线衍射及TH2818自动元件分析仪对Dy：O。掺杂量为0．2％～2％的Ba0.6Sr0.4TiO3陶瓷的微观结构和介电性能进行研究。结果表明，Dy2O3的掺杂没有影响到BST陶瓷的主晶相钙钛矿结构，且一定量的Dy^3＋进入到BST晶格中。BST陶瓷的介电损耗随着掺杂量的增加而逐渐减小，介电常数随着掺杂量的增加呈现先增大后减小的趋势，当掺杂量为0．5％时，介电常数最大，为4474．48。Ba0.6Sr0.4TiO3 powder were prepared by oxalate co-precipitation method using barium nitrate,strontium nitrate, titanium tetrabutoxide and oxalic acid act as raw materials and Dy2O3 as dopant and sintered at 1 250 ℃. The microstructure and dielectric property of Dy2 O3-doped Ba0. 6 St0.4TIO3 were investigated by XRD, SEM and TH2818. The results indicate that the main crystal phase of sample with appropriate Dy2O3 additive had a pervoskite type structure and a certain amount of Dy3＋ is able to enter the lattice of BST. With the increasing Dy2 O3 additive amount, the dielectric constant of materials was increased and followed a decrease. The dielectric constant was maximum （ε1 = 4 474.48） when ω（Dy2O3） = 0.5%.

关 键 词：草酸盐沉淀法 掺杂 介电常数 介电损耗 

分 类 号：TQ174.75[化学工程—陶瓷工业]