光子晶体垂直腔面发射激光器的电流分布研究  

Study on current spreading of photonic crystal vertical cavity surface emitting lasers

作　　者：王宝强[1] 徐晨[1] 刘英明[1] 解意洋[1] 刘发[1] 赵振波[1] 周康[1] 沈光地[1] 

机构地区：[1]北京工业大学北京市光电子技术实验室,北京100124

出　　处：《物理学报》2010年第12期8542-8547,共6页Acta Physica Sinica

基　　金：国家高技术研究发展计划(批准号:2008AA03Z402);北京市自然科学基金(批准号:4092007)资助的课题~~

摘　　要：对氧化限制型外腔式光子晶体垂直腔面发射激光器注入到有源区的电流密度分布进行了分析研究.提出三维电流分布计算模型,研究了光子晶体结构对电流密度分布和器件串联电阻的影响.研究发现,光子晶体孔刻蚀深度越深,电流分布圆对称性越差,引起的串联电阻越大.不同光子晶体图案对电流分布的均匀性和圆对称性也有很大的影响.该模型对于研究、设计氧化限制型外腔式光子晶体垂直腔面发射激光器提供了一个有用的分析方法.The distribution of injected current in the active region of external cavity oxide-confined photonic crystal vertical cavity surface emitting lasers is studied extensively.An advanced three-dimensional model of current distribution is used to analyse the effects of photonic crystal structures on current density distribution and series resistance of the device.It is found that the deeper the photonic crystal holes are,the worse the circular symmetry of the current density distribution is and the higher the series resistance is,especially when the ethching depths of holes are larger than 2 μm.Different patterns of photonic crystal structures have a great imfluence on current density distribution and circular symmetry.The results are beneficial to the research and the design of external cavity oxide-confined photonic crystal vertical cavity surface emitting lasers.

关 键 词：光子晶体 垂直腔面发射激光器 电流分布 

分 类 号：TN248[电子电信—物理电子学]