界面缺陷态密度与衬底电阻率取值对硅异质结光伏电池性能的影响  

Effects of substrate resistivity and interface defect density on performance of solar cell with silicon heterojunctions

作　　者：周骏[1,2] 邸明东[2] 孙铁囤 孙永堂[2] 汪昊[2] 

机构地区：[1]宁波大学光学与光电子技术研究所,宁波315211 [2]江苏大学光信息科学与技术系,镇江212013 [3]常州亿晶光电科技有限公司,常州213223

出　　处：《物理学报》2010年第12期8870-8876,共7页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:60977048);浙江省"钱江人才计划"(批准号:2007R10015);宁波市重点实验室基金(批准号:2007A22006);宁波大学王宽成幸福基金资助的课题~~

摘　　要：在异质结前界面缺陷态密度Dit1和异质结背界面缺陷态密度Dit2均取不同值时,对p型单晶硅(c-Si(p))为衬底的硅异质结太阳电池的衬底电阻率ρ与电池性能的关系进行了数值研究.结果表明:衬底电阻率的最优值ρop取决于前界面缺陷态密度Dit1,且ρop随着Dit1的增大而增大;当ρ>ρop时,背界面缺陷态密度Dit2对衬底电阻率的可取值范围具有较大影响,Dit2越大衬底电阻率的可取值范围越小.For silicon heterojunction solar cell with p-type a-Si：H back surface field,the effects of substrate resistivity on the performance of solar cell with different defect densities on the front and the rear surfaces of the p-type c-Si wafer are investigated numerically by computer simulation.The results indicate that the optimized resistivity of the substrate（ρop） is related to the interface defect density on the front surface of c-Si wafer（Dit1）,and ρop increases with the increase of Dit1.The value scale of resistivity of substrate is influenced greatly by the interface defect density on the rear surface of c-Si wafer（Dit2） for ρ 〉ρop,and the larger the value of Dit2,the smaller will the range of acceptable ρ value be.

关 键 词：硅异质结太阳电池 衬底电阻率 c-Si(p)/a-Si:H界面缺陷 

分 类 号：TM914.4[电气工程—电力电子与电力传动]