Monolithic integration of electroabsorption modulators and tunnel injection distributed feedback lasers using quantum well intermixing  

Monolithic integration of electroabsorption modulators and tunnel injection distributed feedback lasers using quantum well intermixing

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作  者:汪洋 潘教青 赵玲娟 朱洪亮 王圩 

机构地区:[1]Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences

出  处:《Chinese Physics B》2010年第12期328-333,共6页中国物理B(英文版)

基  金:Project supported by the National Natural Science Foundation of China (Grant Nos. 60736036,60706009,60777021 and 60702006);the National Basic Research Program of China (Grant Nos. 2006CB604901 and 2006CB604902);the National High Technology Research and Development Program of China (Grant Nos. 2007AA03Z419,2007AA03Z417 and 2009AA03Z442)

摘  要:Electroabsorption modulators combining Franz-Keldysh effect and quantum confined Stark effect have been mono-lithically integrated with tunnel-injection quantum-well distributed feedback lasers using a quantum well intermixing method. Superior characteristics such as extinction ratio and temperature insensitivity have been demonstrated at wide temperature ranges.Electroabsorption modulators combining Franz-Keldysh effect and quantum confined Stark effect have been mono-lithically integrated with tunnel-injection quantum-well distributed feedback lasers using a quantum well intermixing method. Superior characteristics such as extinction ratio and temperature insensitivity have been demonstrated at wide temperature ranges.

关 键 词:electroabsorption modulator tunnel injection wide temperature range operation quantum well intermixing 

分 类 号:TN248[电子电信—物理电子学]

 

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