Electrical characteristics of SiGe-on-insulator nMOSFET and SiGe-silicon-on-aluminum nitride nMOSFET  

作　　者：刘红侠 李斌 李劲 袁博 郝跃 

机构地区：[1]Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Devices,School of Microelectronics,Xidian University

出　　处：《Chinese Physics B》2010年第12期472-477,共6页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.60976068 and 60936005);Cultivation Fund of the Key Scientific and Technical Innovation Project,Ministry of Education of China(Grant No.708083);Fundamental Research Funds for the Central Universities(Grant No.200807010010)

摘　　要：This paper investigates the electrical characteristics and temperature distribution of strained Si/SiGe n-type metal oxide semiconductor field effect transistor （nMOSFET） fabricated on silicon-on-aluminum nitride （SOAN） substrate. This novel structure is named SGSOAN nMOSFET. A comparative study of self-heating effect of nMOSFET fabricated on SGOI and SGSOAN is presented. Numerical results show that this novel SGSOAN structure can greatly eliminate excessive self-heating in devices, which gives a more promising application for silicon on insulator to work at high temperatures.This paper investigates the electrical characteristics and temperature distribution of strained Si/SiGe n-type metal oxide semiconductor field effect transistor （nMOSFET） fabricated on silicon-on-aluminum nitride （SOAN） substrate. This novel structure is named SGSOAN nMOSFET. A comparative study of self-heating effect of nMOSFET fabricated on SGOI and SGSOAN is presented. Numerical results show that this novel SGSOAN structure can greatly eliminate excessive self-heating in devices, which gives a more promising application for silicon on insulator to work at high temperatures.

关 键 词：electrical characteristics self-heating effect SiGe-on insulator SiGe-silicon-on-aluminum nitride 

分 类 号：TN386.1[电子电信—物理电子学] TN386