钐对不同氧空位SnO_2气敏性能的影响  

Effect of Samarium on Gas-Sensing Properties of SnO_2 with Different Numbers of Oxygen Vacancy

作　　者：王道[1] 叶青[1] 龙洁[1] 金钧[1] 

机构地区：[1]北京工业大学化学与环境工程学系,北京100022

出　　处：《中国稀土学报》1999年第1期16-19,共4页Journal of the Chinese Society of Rare Earths

摘　　要：用Sm对不同氧空位浓度的SnO(2-x)气敏材料进行掺杂化学改性，并进行XRD，XPS，SEM分析和比表面积测定，考察改性后的气敏材料对C6H6，C6H(12)，C2H5OH，CO，H2等的气敏性能。氧空位浓度不同，改性的效果不同，因此可通过控制氧空位浓度以达到提高气敏材料灵敏度和选择性的目的。The SnO_2- x with different numbers of oxygen vacancy was modified by Sin. The modifiedSnO2- x was investigated by means of X-ray diffraction, X-ray photoelectron speCtroscopy, andthe scanning electron microscopy. The gassensing properties and selectivity of the samples toC6He, C6HI', C2H5OH, CO and Hi were measured. The experiment results show that the gassensing properties of Sin/SnOZ-- x vary with the numbers of oxygen vacancy, therefore it is possible to improve gas-sensing properties of do~ SnO2 by controlling its oxygen vacancy.

关 键 词：稀土 二氧化锡 钐 气敏材料 氧空位 掺杂 改性 

分 类 号：O614.432[理学—无机化学] O657.1[理学—化学]