微控制器DPI测量的电磁传导抗扰度特性模型  

A Direct Power Injection Model of a Microcontroller for Electromagnetic Immunity Prediction

作　　者：高雪莲[1] 田聪颖[1] 陈银红[1] 陈彦宇[1] 

机构地区：[1]华北电力大学电气与电子工程学院,北京102206

出　　处：《石家庄学院学报》2010年第6期80-85,共6页Journal of Shijiazhuang University

基　　金：国际科技合作计划(2007DFA71250);华北电力大学青年博士基金(20062250)

摘　　要：提出1种描述微控制器直接功率注入(direct power injection,DPI)测量电磁传导抗扰度特性的模型.该模型在国际已有模型的基础上,在PDN模块中增加了内核网络、PLL,A/D网络等模型,能更精确的反映PDN的物理情况,同时能实现集成电路电磁兼容模型的标准化建模.最后,在不同频率的射频电磁干扰下对微控制器被测I/O端口抗扰度进行仿真分析,并与测量结果对比,结果表明在500 MHz以下,模型预测抗扰度的不确定度在允许范围内.该模型应用于PCB级别,可精确仿真PCB板的电磁兼容情况,仿真精度远高于使用IBIS模型.An electrical simulation model for a direct power injection（DPI）setup which is used to measure the conducted immunity of a microcontroller is investigated.In order to describe the physical structure of the PDN more accurately,and to standardize the IC electromagnetic compatibility modelling process,a modified PDN module which adds the core,PDN network,PLL,A/D network model is proposed based on the existing model of the French workgroup.At last,by simulating the conducted immunity of the I/O port under RF interference at different frequencies,and comparing the simulation results with the measurement results,the effectiveness of the model can be approved up to 500 MHz with an acceptable uncertainty.By applying this proposed model to the immunity simulation in PCB level,the accuracy is much higher than that by using the IBIS model.

关 键 词：电磁抗扰度 电磁兼容特性 微控制器 直接功率注入测量 

分 类 号：TN401[电子电信—微电子学与固体电子学]