铜表面电沉积Ni(P)及其对Sn-Cu合金/Cu界面固相反应的影响  

Electrodeposition of Ni(P) on Cu Substrate and Its Effect on Interfacial Solid Reaction Between Sn-Cu Alloy and Cu

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作  者:黄书斌[1] 汤文明[1] 

机构地区:[1]合肥工业大学材料科学与工程学院,安徽合肥230009

出  处:《金属功能材料》2010年第6期26-31,共6页Metallic Functional Materials

摘  要:采用扫描电子显微镜(SEM)、电子能谱仪(EDS)、X射线衍射仪(XRD)研究了铜基体上电沉积Ni(P)层的结构以及Ni(P)层对电沉积Sn-Cu合金/Cu界面固相反应的影响。研究表明:电沉积Ni(P)层为非晶结构,含29%(原子)的P,经过225℃热处理转变成晶态Ni5P2。经过225℃热处理,Sn-Cu合金/Cu界面反应在界面处形成连续的Cu6Sn5及Cu3Sn层。而Sn-Cu合金/电沉积Ni(P)-Cu界面反应微弱,主要在Sn-Cu合金/Ni(P)界面前沿的Sn-Cu合金中形成棒状或块状(Ni,Cu)3Sn4,Cu基底不与Sn-Cu合金反应。电沉积Ni(P)合金层能有效阻挡Sn-Cu合金/Cu界面反应。Structure of the Ni(P) alloy layer electrodeposited on Cu substrate and effect of the electrodeposited Ni(P) layer on the Sn-Cu alloy/Cu interfacial solid reaction were studies using SEM,EDS and XRD.The results show that the electrodeposited Ni(P) layer is amorphous of 29 at.%P and transforms to crystalline Ni5P2 after annealing at 225 ℃.When annealing at 225 ℃,the Sn-Cu alloy/Cu interfacial reaction occurs to form continuous Cu6Sn5 and Cu3Sn layers along the Sn-Cu alloy/Cu interface.Comparatively,the interfacial reaction between Sn-Cu alloy and deposited Ni(P)-Cu substrate is weak,mainly form the bar/plate-like(Ni,Cu)3Sn4 particles embedded in the Sn-Cu alloy.The Sn-Cu alloy/Cu interfacial reaction does not take place,indicating the electroplated Ni(P) layer can effectively inhibit the Sn-Cu alloy/Cu interfacial reaction.

关 键 词:Sn-Cu合金 Cu基底 Ni(P)合金 电沉积 界面反应 

分 类 号:TQ153.2[化学工程—电化学工业]

 

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