高性能分段温度曲率补偿基准电压源设计  

Design of high performance bandgap reference based on piecewise temperature curvature compensated technology

作　　者：代国定[1,2] 徐洋[1] 李卫敏[1] 黄鹏[1] 

机构地区：[1]西安电子科技大学电路CAD研究所,陕西西安710071 [2]西安电子科技大学超高速电路设计与电磁兼容教育部重点实验室,陕西西安710071

出　　处：《浙江大学学报（工学版）》2010年第11期2142-2147,共6页Journal of Zhejiang University：Engineering Science

基　　金：国家部委预研基金资助项目(9140A08010208DZ0123)

摘　　要：针对带隙基准电压源温漂高、电源抑制比(PSRR)低的问题,提出一种新颖的分段曲率补偿技术.该电路将基准源工作的全温度范围划分为3个区间,对各段温度区间进行不同的温度补偿,同时引入电流环负反馈结构,提高电路在低频时的电源抑制比,实现在-40～150℃内,温度系数为1.24×10-6,在DC时电源抑制比为-137dB.该电路采用TSMC0.6μmBCD工艺设计实现,芯片面积为0.5mm2,关断电流小于0.1μA,工作静态功耗为125μW.投片测试结果验证了电路设计的正确性,当电源电压为2.5～6.0V时,该基准源输出电压摆幅仅为0.220mV.A novel piecewise curvature-corrected technology was proposed in this paper to solve the problem that a bandgap voltage reference with high temperature coefficient and low PSRR.In the reference circuit,the whole operating temperature range was divided into three sub-ranges,so that the reference can be compensated by different temperature functions.At the same time,a negative feedback loop was used to improve PSRR at low frequency.Based on the two points mentioned above,the temperature coefficient of 1.24×10^-6 over the temperature of-40 ℃ to 150 ℃ and PSRR of-137 dB at DC was achieved.The reference is implemented by TSMC 0.6 μm BCD process,the chip area is 0.5 mm2,the shutdown current is lower than 0.1 μA,and the quiescent dissipation is 125 μW.The designed circuit is validated by the results of the chip test,and the reference voltage skew is less than 0.220 mV under the supply voltage ranging from 2.5 V to 6 V.

关 键 词：分段曲率补偿 带隙基准电压 温度系数 电源抑制比 

分 类 号：TN433[电子电信—微电子学与固体电子学]