Temperature coefficients of grain boundary resistance variations in a ZnO/p-Si heterojunction  

作　　者：刘秉策 刘磁辉 徐军 易波 

机构地区：[1]Department of Physics,University of Science and Technology of China

出　　处：《Journal of Semiconductors》2010年第12期11-15,共5页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Nos.50472009,10474091,50532070)

摘　　要：Heteroepitaxial undoped ZnO films were grown on Si （100） substrates by radio-frequency reactive sputtering, and then some of the samples were annealed at N2-800℃ （Sample 1, S1） and 02-800℃ （Sample 2, S2） for 1 h, respectively. The electrical transport characteristics of a ZnO/p-Si heterojunction were investigated. We found two interesting phenomena. First, the temperature coefficients of grain boundary resistances of S 1 were positive （positive temperature coefficients, PTC） while that of both the as-grown sample and S2 were negative （negative temperature coefficients, NTC）. Second, the I-V properties of S2 were similar to those common p-n junctions while that of both the as-grown sample and S 1 had double Schottky barrier behaviors, which were in contradiction with the ideal p-n heterojunction model. Combined with the deep level transient spectra results, this revealed that the concentrations of intrinsic defects in ZnO grains and the densities of interfacial states in ZnO/p-Si heterojunction varied with the different annealing ambiences, which caused the grain boundary barriers in ZnO/p-Si heterojunction to vary. This resulted in adjustment electrical properties ofZnO/p-Si heterojunction that may be suitable in various applications.Heteroepitaxial undoped ZnO films were grown on Si （100） substrates by radio-frequency reactive sputtering, and then some of the samples were annealed at N2-800℃ （Sample 1, S1） and 02-800℃ （Sample 2, S2） for 1 h, respectively. The electrical transport characteristics of a ZnO/p-Si heterojunction were investigated. We found two interesting phenomena. First, the temperature coefficients of grain boundary resistances of S 1 were positive （positive temperature coefficients, PTC） while that of both the as-grown sample and S2 were negative （negative temperature coefficients, NTC）. Second, the I-V properties of S2 were similar to those common p-n junctions while that of both the as-grown sample and S 1 had double Schottky barrier behaviors, which were in contradiction with the ideal p-n heterojunction model. Combined with the deep level transient spectra results, this revealed that the concentrations of intrinsic defects in ZnO grains and the densities of interfacial states in ZnO/p-Si heterojunction varied with the different annealing ambiences, which caused the grain boundary barriers in ZnO/p-Si heterojunction to vary. This resulted in adjustment electrical properties ofZnO/p-Si heterojunction that may be suitable in various applications.

关 键 词：ZnO/p-Si heterojunction grain boundary temperature coefficients of grain boundary resistances intrinsicdefects 

分 类 号：TN304[电子电信—物理电子学]