Hot-carrier-induced on-resistance degradation of step gate oxide NLDMOS  

作　　者：韩雁 张斌 丁扣宝 张世峰 韩成功 胡佳贤 朱大中 

机构地区：[1]Institute of Microelectronics & Photoelectronics,Zhejiang University

出　　处：《Journal of Semiconductors》2010年第12期49-53,共5页半导体学报（英文版）

基　　金：Project supported by the National Science & Technology Major Project of China(No.2009ZX01033-001-003)

摘　　要：The hot-carrier-induced on-resistance degradations of step gate oxide NLDMOS （SG-NLDMOS） transistors are investigated in detail by a DC voltage stress experiment, a TCAD simulation and a charge pumping test. For different stress conditions, degradation behaviors of SG-NLDMOS transistors are analyzed and degradation mechanisms are presented. Then the effect of various doses of n-type drain drift （NDD） region implant on Ron degradation is investigated. Experimental results show that a lower NDD dosage can reduce the hot-carrier induced Ron degradation effectively, which is different from uniform gate oxide NLDMOS （UG-NLDMOS） transistors.The hot-carrier-induced on-resistance degradations of step gate oxide NLDMOS （SG-NLDMOS） transistors are investigated in detail by a DC voltage stress experiment, a TCAD simulation and a charge pumping test. For different stress conditions, degradation behaviors of SG-NLDMOS transistors are analyzed and degradation mechanisms are presented. Then the effect of various doses of n-type drain drift （NDD） region implant on Ron degradation is investigated. Experimental results show that a lower NDD dosage can reduce the hot-carrier induced Ron degradation effectively, which is different from uniform gate oxide NLDMOS （UG-NLDMOS） transistors.

关 键 词：SG-NLDMOS Ron degradation charge-pumping interface state positive oxide-trapped charge 

分 类 号：TN386.1[电子电信—物理电子学] TN432