Density-controllable nonvolatile memory devices having metal nanocrystals through chemical synthesis and assembled by spin-coating technique  

作　　者：王广利 陈裕斌 施毅 濮林 潘力嘉 张荣 郑有炓 

机构地区：[1]School of Electronic Science and Technology and National Laboratory of Solid State Microstructures,Nanjing University

出　　处：《Journal of Semiconductors》2010年第12期70-74,共5页半导体学报（英文版）

摘　　要：A novel two-step method is employed, for the first time, to fabricatc nonvolatile memory devices that have metal nanoerystals. First, size-averaged Au nanocrystals are synthesized chemically; second, they are assembled into memory devices by a spin-coating technique at room temperature. This attractive approach makes it possible to tailor the diameter and control the density of nanocrystals individually. In addition, processes at room temperature prevent Au diffusion, which is a main concem for the application of metal nanocrystal-based memory. The experimental results, both the morphology characterization and the electrical measurements, reveal that there is an optimum density of nanocrystal monolayer to balance between long data retention and a large hysteresis memory window. At the same time, density-controllable devices could also feed the preferential emphasis on either memory window or retention time. All these facts confirm the advantages and novelty of our two-step method.A novel two-step method is employed, for the first time, to fabricatc nonvolatile memory devices that have metal nanoerystals. First, size-averaged Au nanocrystals are synthesized chemically; second, they are assembled into memory devices by a spin-coating technique at room temperature. This attractive approach makes it possible to tailor the diameter and control the density of nanocrystals individually. In addition, processes at room temperature prevent Au diffusion, which is a main concem for the application of metal nanocrystal-based memory. The experimental results, both the morphology characterization and the electrical measurements, reveal that there is an optimum density of nanocrystal monolayer to balance between long data retention and a large hysteresis memory window. At the same time, density-controllable devices could also feed the preferential emphasis on either memory window or retention time. All these facts confirm the advantages and novelty of our two-step method.

关 键 词：metal nanocrystal nonvolatile memory SELF-ASSEMBLE spin-coating technique conductance--voltagecurve memory window 

分 类 号：TB383.1[一般工业技术—材料科学与工程]