Fabrication and characterization of an AlGaN/PZT detector  

作　　者：张燕 孙璟兰 王妮丽 韩莉 刘向阳 李向阳 孟祥建 

机构地区：[1]State Key Laboratory of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Sciences [2]National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2010年第12期87-89,共3页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(No.60807037)

摘　　要：Design, fabrication and characterization of a novel two-color detector for ultraviolet and infrared applications are reported. The detector has a simple multilayer structure composed of n-Al0.3Ga0.7N/i-GaN/p- GaN/SiO2/LaNiO3/PZT/Pt fabricated on a sapphire substrate. Ultraviolet and infrared properties are measured. For the ultraviolet region, a flat band spectral response is achieved in the 302-363 nm band. The detector displays an unbiased responsivity of 0.064 A/W at 355 nm. The current-voltage curve shows that current at zero bias is -1.57 × 10^-12 A. This led to a detectivity of 1.81 × 10^11 cm- Hzl/2/W. In the infrared region, the detectivity of the detector is 1.58 × 10^5 cm. Hz1/2/W at 4μm.Design, fabrication and characterization of a novel two-color detector for ultraviolet and infrared applications are reported. The detector has a simple multilayer structure composed of n-Al0.3Ga0.7N/i-GaN/p- GaN/SiO2/LaNiO3/PZT/Pt fabricated on a sapphire substrate. Ultraviolet and infrared properties are measured. For the ultraviolet region, a flat band spectral response is achieved in the 302-363 nm band. The detector displays an unbiased responsivity of 0.064 A/W at 355 nm. The current-voltage curve shows that current at zero bias is -1.57 × 10^-12 A. This led to a detectivity of 1.81 × 10^11 cm- Hzl/2/W. In the infrared region, the detectivity of the detector is 1.58 × 10^5 cm. Hz1/2/W at 4μm.

关 键 词：A1GaN/PZT dual-band detector UV/IR RESPONSIVITY DETECTIVITY 

分 类 号：TN763.1[电子电信—电路与系统]