不同升温热处理方式二氧化钒薄膜的制备与光学相变性能  

PHASE TRANSITION OF VANADIUM OXIDE FILMS ANNEALED WITH DIFFERENT METHODS

作　　者：梁继然[1,2] 胡明[1] 王晓东[2] 阚强[2] 李贵柯[2] 陈弘达[2] 

机构地区：[1]天津大学电子信息工程学院,天津300072 [2]中国科学院半导体研究所,北京100083

出　　处：《红外与毫米波学报》2010年第6期457-460,共4页Journal of Infrared and Millimeter Waves

基　　金：国家863资助项目(2008AA031401);国家自然科学基金资助项目(60771019);天津市应用基础及前沿技术研究重点项目(08JCZDJC17500);天津大学先进陶瓷与加工技术教育部重点实验室开放基金课题资助(ACMT-2008-05);集成光电子学国家重点联合实验室开放课题支持(2010KFB001)

摘　　要：采用双离子束溅射方法制备氧化钒薄膜,分别利用常规和快速两种升温方式对氧化钒薄膜进行热处理,利用傅里叶变换红外光谱技术对热处理后氧化钒薄膜的变温光学透射性能进行测试,并对5μm波长处透过率随温度的变化曲线进行相变特性分析.实验结果表明,经过常规和快速升温热处理后均获得了二氧化钒薄膜;快速升温热处理后得到的薄膜中二氧化钒晶粒较小,尺寸分布均匀;而常规升温热处理后的二氧化钒薄膜中晶粒尺寸分布较宽、常规和快速升温热处理后,氧化钒薄膜的光透过率均存在可逆突变特性,变化幅度均超过60%.相变性能分析结果表明,快速升温热处理获得的二氧化钒薄膜相变持续的温度宽度较大,光学相变温度为63.74℃,高于常规升温热处理的60.31℃.Vanadium oxide thin films were deposited by dual ion beam sputtering,and then annealled with different procedures of temperature elevating.Optical transmission properties were measured at different temperature by use of Fourier transform infrared spectrum,from which the relationship of transmission and temperature at a fixed wavelength of 5μm was obtained.The results show that the vanadium oxide thin film annealed with rapid elevating temperature has smaller and uniform crystal size,while the film annealed with normal elevating temperature has larger and wider distributed crystal size.All the films after annealing have abrupt change over 60% in transmission in infrared band.The phase transition temperature of vanadium oxide thin film after rapid elevating temperature annealing is 63.74℃,which is higher than that of vanadium oxide thin film after normal elevating temperature annealing,60.31℃.The temperature range of phase transition of the former is also broader.

关 键 词：氧化钒薄膜 红外透射光谱 快速升温 

分 类 号：O484[理学—固体物理] O434[理学—物理]