激光化学气相沉积快速生长高取向TiN_x薄膜的研究  

High-speed Deposition of Oriented TiN_x Films by Laser Metal-organic Chemical Vapor Deposition

作　　者：公衍生[1] 涂溶[2] 後藤孝[2] 

机构地区：[1]中国地质大学(武汉)教育部纳米矿物材料及应用工程研究中心材料科学与化学工程学院,武汉430074 [2]日本东北大学金属材料研究所

出　　处：《无机材料学报》2010年第4期391-395,共5页Journal of Inorganic Materials

基　　金：中央高校基本科研业务费专项基金

摘　　要：采用激光化学气相沉积(LCVD)技术在氧化铝衬底上制备了高取向的TiNx薄膜,重点研究了激光功率(PL)、衬底预热温度(Tpre)和沉积总压力(Ptot)对薄膜取向和沉积速率的影响,采用X射线衍射(XRD)、俄歇能谱(AES)和场发射扫描电镜(FESEM)对薄膜组成和结构进行了表征.结果表明:所得到的TiNx薄膜成分均匀,其取向与衬底预热温度有关,随着预热温度的升高,TiNx薄膜的取向由(111)变为(200),薄膜的取向与其微观结构一致.TiNx薄膜的沉积速率随着激光功率升高而增大,在PL=100W时,达到最大值90μm/h(沉积面积为300mm2),显著高于采用其它方法制备的TiNx薄膜.TiNx films were prepared on Al2O3 substrates by laser chemical vapor deposition（LCVD）.The effects of laser power（PL）,pre-heatment temperature（Tpre） and total pressure in the main chamber（Ptot） on the orientation and deposition rate（Rdep） of TiNx films were investigated.The deposited TiNx films were characterized by X-ray diffraction（XRD）,atomic emission spectrometry（AES） and field emission scanning electron microscope（FESEM）.The results showed that the composition in TiNx films was uniform,and the orientation was relative to the Tpre,which changed from（111） to（200） orientation with increasing Tpre.The orientation was consistent with its microstructure.The Rdep of TiNx films increased with increasing PL,showing a maximum（90μm/h） at PL = 100W at a deposition area of about 300mm2,which was higher than that of TiNx films prepared by other methods.

关 键 词：TiNx薄膜 快速生长 取向 激光化学气相沉积(LCVD) 

分 类 号：TB43[一般工业技术] TB34