半导体硅上电沉积Cu/Co层状薄膜  

Preparation of Cu/Co Layer Film by Electrodeposition on Semiconductor Silicon

作　　者：刘冰[1] 龚正烈[2] 姚素薇[3] 郭鹤桐[3] 袁华堂[1] 张允什[1] 

机构地区：[1]南开大学新能源材料化学研究所,天津300071 [2]天津理工学院光电系,天津300191 [3]天津大学化工学院,天津300072

出　　处：《物理化学学报》1999年第4期356-360,共5页Acta Physico-Chimica Sinica

基　　金：国家自然科学基金

摘　　要：The Cu/Co layer film on the sendconductor silicon was obtained by electrodeposition for the first time. The results of current - time transient curves and STM image showed that the wt of Cu film is two-dimensional while an island three-dimension poth for the Co film was formed. The addition of CrO3 changed the current - time transient curves, and affected the growth of crystal. The addition of CrO3 decreased the nucleation rate of Cu, while it changed the shaPe of current-timetransient curves of the deposition of Co at higher deposition potelltials. For the deposition of Co, addition of CrO3 can form the adhesive film [Co. xCr2O3’ YH2O]ad or [CoOH. nCr(OH)3]ad, which decreased the nucleation rate of Co.The Cu/Co layer film on the sendconductor silicon was obtained by electrodeposition for the first time. The results of current - time transient curves and STM image showed that the wt of Cu film is two-dimensional while an island three-dimension poth for the Co film was formed. The addition of CrO3 changed the current - time transient curves, and affected the growth of crystal. The addition of CrO3 decreased the nucleation rate of Cu, while it changed the shaPe of current-timetransient curves of the deposition of Co at higher deposition potelltials. For the deposition of Co, addition of CrO3 can form the adhesive film [Co. xCr2O3' YH2O]ad or [CoOH. nCr(OH)3]ad, which decreased the nucleation rate of Co.

关 键 词：电沉积 层状膜 多层膜 硅 半导体硅 铜 钴 

分 类 号：TN304.12[电子电信—物理电子学]