Properties of ZnO Thin Films Grown on Si (100) Substrates by Pulsed Laser Deposition  

作　　者：Young Rae Jang Keon-Ho Yoo Seung Min Park 

机构地区：[1]Department of Physics,Kyung Hee University [2]Department of Chemistry,Kyung Hee University

出　　处：《Journal of Materials Science & Technology》2010年第11期973-976,共4页材料科学技术（英文版）

摘　　要：ZnO thin films were grown on Si （100） substrates by pulsed laser deposition using a ZnO target.The substrate temperature was varied in the range of room temperature to 800 ℃,and the oxygen partial pressure of 0.1333 Pa （1 m Torr） to 1333 Pa （10 Torr）.The properties of the resulting films were investigated by photoluminescence （PL）,grazing incidence X-ray diffraction （GIXRD）,X-ray photoelectron spectroscopy （XPS）,and field emission scanning electron microscopy （FESEM）.Based on the ultraviolet （UV,～380 nm） to visible emission ratio in the PL spectrum,the optimum growth conditions were determined to be 600 ℃ and 133.3 Pa （1 Torr）,respectively.The oxygen 1s peak in the XPS spectrum was decomposed into two peaks.The peak at lower binding energy increased in intensity with the oxygen partial pressure from 0.1333 Pa （1 m Torr） to 133.3 Pa （1 Torr） while the other peak decreased.The GIXRD curve at the optimum condition showed strong two peaks （002） and （103）.A strong correlation between the （103） peak intensity and the UV emission intensity was found.ZnO thin films were grown on Si （100） substrates by pulsed laser deposition using a ZnO target.The substrate temperature was varied in the range of room temperature to 800 ℃,and the oxygen partial pressure of 0.1333 Pa （1 m Torr） to 1333 Pa （10 Torr）.The properties of the resulting films were investigated by photoluminescence （PL）,grazing incidence X-ray diffraction （GIXRD）,X-ray photoelectron spectroscopy （XPS）,and field emission scanning electron microscopy （FESEM）.Based on the ultraviolet （UV,～380 nm） to visible emission ratio in the PL spectrum,the optimum growth conditions were determined to be 600 ℃ and 133.3 Pa （1 Torr）,respectively.The oxygen 1s peak in the XPS spectrum was decomposed into two peaks.The peak at lower binding energy increased in intensity with the oxygen partial pressure from 0.1333 Pa （1 m Torr） to 133.3 Pa （1 Torr） while the other peak decreased.The GIXRD curve at the optimum condition showed strong two peaks （002） and （103）.A strong correlation between the （103） peak intensity and the UV emission intensity was found.

关 键 词：ZNO Pulsed laser deposition PHOTOLUMINESCENCE 

分 类 号：TB383.2[一般工业技术—材料科学与工程]